Integrated circuit including a power MOS transistor

Details Integrated circuit including a power MOS transistor Integrated circuit including a power MOS transistor

2008-01-30

2011-12-27

Menz, Douglas (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S360000

Reexamination Certificate

active

08084821

ABSTRACT:
An integrated circuit includes a first transistor having a first gate and a first source and a second transistor having a second gate and a second source. The integrated circuit includes a first source contact adjacent the second transistor and coupled to the first source and the second source. The integrated circuit includes a first bond wire coupled to the first source contact.

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“Impact of Thermal Overload Operation on Wirebond and Metallization Reliability in Smart Power Devices”, Michael Glavanovics, et al., IEEE, 2004 (4 pgs.).

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