Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2009-05-03

2011-10-04

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29262

Reexamination Certificate

active

08030704

ABSTRACT:
A trench gate type power transistor of high performance is provided. A trench gate as a gate electrode is formed in a super junction structure comprising a drain layer and an epitaxial layer. In this case, the gate electrode is formed in such a manner that an upper surface of the epitaxial layer becomes higher than that of a channel layer formed over the drain layer. Then, an insulating film is formed over each of the channel layer and the epitaxial layer and thereafter a part of the insulating film is removed to form side wall spacers over side walls of the epitaxial layer. Subsequently, with the side wall spacers as masks, a part of the channel layer and that of the drain layer are removed to form a trench for a trench gate.

REFERENCES:
patent: 5216275 (1993-06-01), Chen
patent: 6916745 (2005-07-01), Herrick et al.
patent: 2006/0216896 (2006-09-01), Saito et al.
patent: 2007/0120201 (2007-05-01), Yamaguchi et al.

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