Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-20
2010-11-16
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21409, C438S270000
Reexamination Certificate
active
07834393
ABSTRACT:
A semiconductor device includes a power MOSFET including a trench formed on a surface of a semiconductor layer forming a drain; a gate electrode formed in the trench via a gate insulation film and made of poly-silicon; a channel diffusion layer formed at a surface side of the semiconductor layer shallower than the trench by neighboring the trench; and a source diffusion layer formed at a surface side of the channel diffusion layer by neighboring the trench; wherein a reverse impurity layer is provided at a bottom part side of the trench of the poly-silicon forming the gate electrode; and an impurity ion that is a conductive type opposite to the conductive type of an impurity ion provided in the poly-silicon at a surface side of the trench is provided in the reverse impurity layer.
REFERENCES:
patent: 5143859 (1992-09-01), Harada
patent: 5877058 (1999-03-01), Gardner et al.
patent: 6262439 (2001-07-01), Takeuchi et al.
patent: 7-50315 (1995-02-01), None
patent: 10-173175 (1998-06-01), None
patent: 3699907 (2005-07-01), None
Cooper & Dunham LLP
Laurenzi, III Mark A
Pham Thanh V
Ricoh & Company, Ltd.
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