Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-06-02

2010-11-23

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21351

Reexamination Certificate

active

07838349

ABSTRACT:
A silicon nitride film is formed between interlayer insulating films covering an upper surface of an element formed on a surface of a semiconductor layer. With this structure, a semiconductor device comprising an isolation insulating film of PTI structure, which suppresses a floating-body effect and improves isolation performance and breakdown voltage, and a method of manufacturing the semiconductor device can be obtained.

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