Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2008-01-03

2010-06-08

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S230030, C365S185130

Reexamination Certificate

active

07733683

ABSTRACT:
Disclosed is a semiconductor memory including ferroelectric capacitors. Memory cells each including a ferroelectric capacitor and an insulted-gate-type cell transistor are connected to a corresponding one of bit lines. Insulated-gate-type separating transistors are connected between multiple bit-line selecting transistors and multiple sense amplifiers, respectively. When the separating transistors are turned on, data retained in the sense amplifiers are capable of being written to the memory cells during the same time period substantially.

REFERENCES:
patent: 5903492 (1999-05-01), Takashima
patent: 6473330 (2002-10-01), Ogiwara et al.
patent: 2002/0122328 (2002-09-01), Oowaki et al.
patent: 2002/0188893 (2002-12-01), Ogiwara et al.
patent: 2003/0156489 (2003-08-01), Takeuchi et al.

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