PIN junction photovoltaic element containing Zn, Se, Te, H in an

Details PIN junction photovoltaic element containing Zn, Se, Te, H in an PIN junction photovoltaic element containing Zn, Se, Te, H in an

1988-11-18

1991-04-16

James, Andrew J.

357 11, 357 16, 357 17, H01L 2714, H01L 3100, H01L 2918, H01L 29161

Patent

active

050087266

ABSTRACT:
An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZSnSe.sub.1-x Te.sub.x :H:M film, where M is a dopant of p-type or n-type: the quantitative ratio of the Se to the Te is in the range of from 1:9 to 3:7 in terms of atomic ratio: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

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Larsen et al, "Electrical Transport & Photoelectronic Properties of ZnTe:Al Crystal", 4-8-71, pp. 172-181.
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