Programmable resistance memory element and method for making...

Details Programmable resistance memory element and method for making... Programmable resistance memory element and method for making...

2008-02-07

2010-11-16

Le, Thao (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE31029

Reexamination Certificate

active

07833823

ABSTRACT:
A programmable resistance memory element. The active volume of memory material is made small by the presence of a small area of contact between the conductive material and the memory material. The area of contact is created by forming a region of conductive material and an intersecting sidewall layer of the memory material. The region of conductive material is preferably a sidewall layer of conductive material.

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patent: 6115352 (2000-09-01), Ohno et al.
patent: 6118135 (2000-09-01), Gonzalez et al.
patent: 6261964 (2001-07-01), Wu et al.
patent: 6653733 (2003-11-01), Gonzalez et al.

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