Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-03-06
2010-06-08
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S440000, C257SE21127
Reexamination Certificate
active
07732846
ABSTRACT:
A semiconductor device includes: a plurality of pixel units disposed in a matrix shape, each of the plurality of pixel units including: a first photoelectric conversion element for converting incident light of a first color into signal charges; a second photoelectric conversion element for converting incident light of a second color into signal charges; a third photoelectric conversion element for converting incident light of a third color into signal charges; and a detector circuit shared by the first to third photoelectric conversion elements for detecting the signal charges converted by each of the first to third photoelectric conversion elements, wherein the plurality of pixel units are pixel units adjacently disposing a row (column) juxtaposing the first photoelectric conversion element and detector circuit and a row (column) juxtaposing the second and third photoelectric conversion elements.
REFERENCES:
patent: 5506430 (1996-04-01), Ohzu
patent: 7382010 (2008-06-01), Choi
patent: 2007/0201114 (2007-08-01), Egawa
patent: 2006-165567 (2006-06-01), None
Fujitsu Semiconductor Limited
Potter Roy K
Westerman Hattori Daniels & Adrian LLP
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