Semiconductor device and fabrication process of...

Details Semiconductor device and fabrication process of... Semiconductor device and fabrication process of...

2006-01-25

2010-06-08

Bryant, Kiesha R (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21243

Reexamination Certificate

active

07732347

ABSTRACT:
A method of fabricating a semiconductor device on a Si substrate includes a first step of forming an insulation film containing an oxide of Zr or Hf on a Si substrate, a second step of forming a gate electrode film on the insulation film, a third step of patterning the gate electrode film by an etching process, a fourth step of annealing, after the third step, the insulation film in a processing gas ambient containing halogen, and a fifth step of removing the insulation film applied with the annealing process.

REFERENCES:
patent: 6514808 (2003-02-01), Samavedam et al.
patent: 6573197 (2003-06-01), Callegari et al.
patent: 6632729 (2003-10-01), Paton
patent: 6764898 (2004-07-01), En et al.
patent: 6818516 (2004-11-01), Lo et al.
patent: 6941956 (2005-09-01), Osawa et al.
patent: 7037845 (2006-05-01), Brask et al.
patent: 2002/0163039 (2002-11-01), Clevenger et al.
patent: 2003/0022432 (2003-01-01), Hobbs et al.
patent: 2003/0045062 (2003-03-01), Puchner
patent: 2003/0045080 (2003-03-01), Visokay et al.
patent: 2003/0057504 (2003-03-01), Muraoka et al.
patent: 2003/0104706 (2003-06-01), Mitsuhashi et al.
patent: 2003/0230549 (2003-12-01), Buchanan et al.
patent: 2003/0232506 (2003-12-01), Metzner et al.
patent: 2004/0147101 (2004-07-01), Pomarede et al.
patent: 2005/0269648 (2005-12-01), Basceri et al.
patent: 01-283936 (1989-11-01), None
patent: 2002-75972 (2002-03-01), None
patent: 2003-174009 (2003-06-01), None
patent: WO 03/012850 (2003-02-01), None
International Technology Roadmap for Semiconductors—Front End Processes, 2001 Edition. Cited in the specification.
Office Action dated Jan. 19, 2010 issued in corresponding Japanese Patent Application No. 2005-507407.
Research Disclosure dated Jun. 1989.

Affiliated with

Also associated with

Rating

Semiconductor device and fabrication process of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and fabrication process of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and fabrication process of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4245434