Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-06-28

2010-06-08

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21409, C257SE29226

Reexamination Certificate

active

07732880

ABSTRACT:
A conventional semiconductor device, for example, a MOS transistor including an offset gate structure has a problem that it is difficult to reduce the device size. In a semiconductor device according to the present invention, for example, in a P-channel MOS transistor including an offset gate structure, a LOCOS oxide film is formed between a source region and a drain region in an N type epitaxial layer. A gate electrode is formed to be positioned on the LOCOS oxide layer. In addition, a P type diffusion layer as the drain region and a P type diffusion layer as the source region are formed with a high positional accuracy with respect to the gate electrode. This structure makes it possible to reduce the device size of the MOS transistor.

REFERENCES:
patent: 7288816 (2007-10-01), Kanda et al.
patent: 2003-309258 (2003-10-01), None
patent: 2003-324159 (2003-11-01), None

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