Phase change memory devices and methods of fabricating the same

Details Phase change memory devices and methods of fabricating the same Phase change memory devices and methods of fabricating the same

2008-07-03

2010-11-16

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S005000, C257S289000, C257SE29276, C365S100000, C365S148000

Reexamination Certificate

active

07834340

ABSTRACT:
Phase change memory devices are provided including a selection element electrically connected to a phase change material pattern. The selection element includes a metallic conductor and a semiconductor that are in contact with each other. A depletion region in contact with a metallic pattern is generated in the semiconductor in an equilibrium state. The depletion region includes a high barrier region having an electric potential barrier higher than an interface electric potential barrier and a low barrier region having an electric potential barrier lower than the interface electric potential barrier. Related methods are also provided.

REFERENCES:
patent: 6261932 (2001-07-01), Hulfachor
patent: 6995446 (2006-02-01), Karpov et al.
patent: 2008/0113469 (2008-05-01), Eun et al.
patent: 1020060094424 (2006-08-01), None
patent: 1020060110559 (2006-10-01), None

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