Semiconductor storage device

Details Semiconductor storage device Semiconductor storage device

2007-10-17

2010-06-15

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S230080, C365S203000

Reexamination Certificate

active

07738281

ABSTRACT:
A semiconductor storage device according to the present invention comprises a plurality of memory cells each provided with an access transistor in which a source is connected to a bit line and a gate is connected to a word line and a capacitor in which a storage electrode is connected to a drain of the access transistor, the plurality of memory cells being placed in a matrix shape in column and row directions, a sense amplifier circuit connected to the source of the access transistor via the bit line, a bit-line precharge voltage generating circuit for generating a bit-line precharge voltage lower than a sense amplifier supply voltage to be supplied to the sense amplifier circuit and supplying the generated bit-line precharge voltage to the bit line, and a cell plate voltage generating circuit for generating a cell plate voltage set to be lower than the bit-line precharge voltage and supplying the generated cell plate voltage to a plate electrode of the capacitor.

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patent: 2004/0114447 (2004-06-01), Ooishi
patent: 2008/0151598 (2008-06-01), Madan
patent: 11-16354 (1999-01-01), None

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