High-voltage metal-oxide-semiconductor device and method of...

Details High-voltage metal-oxide-semiconductor device and method of... High-voltage metal-oxide-semiconductor device and method of...

2007-05-24

2010-11-16

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S376000, C257S399000, C257S400000, C257S501000, C257S509000, C257S648000, C257SE29016

Reexamination Certificate

active

07834406

ABSTRACT:
The present invention pertains to a high-voltage MOS device. The high-voltage MOS device includes a substrate, a first well, a first field oxide layer enclosing a drain region, a second field oxide enclosing a source region, and a third field oxide layer encompassing the first and second field layers with a device isolation region in between. A channel region is situated between the first and second field oxide layers. A gate oxide layer is provided on the channel region. A gate is stacked on the gate oxide layer. A device isolation diffusion layer is provided in the device isolation region.

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patent: 7214591 (2007-05-01), Hsu
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patent: 2006/0068538 (2006-03-01), Ogura
patent: I238517 (2005-08-01), None

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