Semiconductor memory device including a semiconductor film...

Details Semiconductor memory device including a semiconductor film... Semiconductor memory device including a semiconductor film...

2008-02-19

2010-06-08

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21208, C438S003000

Reexamination Certificate

active

07732847

ABSTRACT:
A semiconductor memory device is composed of a field effect transistor using the interface between a ferroelectric film and a semiconductor film as the channel and including a gate electrode to which a voltage for controlling the polarization state of the ferroelectric film is applied and source/drain electrodes provided on both ends of the channel to detect a current flowing in the channel in accordance with the polarization state. The semiconductor film is made of a material having a spontaneous polarization and the direction of the spontaneous polarization is parallel with the interface between the ferroelectric film and the semiconductor film.

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Yoshimura, T., et al., “Novel Ferroelectric Gate Thin-Film Transistors Using a Polar Semiconductor Channel”, Japanese Journal of Applied Physics, 2006, vol. 45, No. 48, pp. L1266-L1269, The Japan Society of Applied Physics.

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