Silicon interposer producing method, silicon interposer and...

Details Silicon interposer producing method, silicon interposer and... Silicon interposer producing method, silicon interposer and...

2008-10-28

2010-12-14

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21122

Reexamination Certificate

active

07851359

ABSTRACT:
A silicon interposer producing method comprising the steps of forming through holes12in a silicon wafer11, forming an oxide coating13on the silicon wafer11, providing a power feeding layer14for plating on one of the surfaces of the through holes12, supplying a low thermal expansion filler15having a thermal expansion coefficient lower than the thermal expansion coefficient of the conductive material16of through-hole electrodes17to the through holes12, filling the conductive material16into the through holes12by plating to form the through-hole electrodes17, and removing the power feeding layer14for plating.

REFERENCES:
patent: 5266181 (1993-11-01), Matsumura et al.
patent: 6193910 (2001-02-01), Ikai et al.
patent: 2006/0286789 (2006-12-01), Sunohara et al.
patent: 2006-351968 (2006-12-01), None

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