Semiconductor device and method of forming the same

Details Semiconductor device and method of forming the same Semiconductor device and method of forming the same

2007-09-21

2010-06-15

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S374000, C257S381000, C257SE21197

Reexamination Certificate

active

07737505

ABSTRACT:
A semiconductor device may include, but is not limited to, a single crystal silicon diffusion layer, a polycrystal silicon conductor, and a diffusion barrier layer. The diffusion barrier layer separates the polycrystal silicon conductor from the single crystal silicon diffusion layer. The diffusion barrier layer prevents a diffusion of at least one of silicon-interstitial and silicon-vacancy between the single crystal silicon diffusion layer and the polycrystal silicon conductor.

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