Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-08-29
2010-12-28
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S052000, C257S057000, C257S066000, C257S072000, C257SE29273, C257SE29151
Reexamination Certificate
active
07858982
ABSTRACT:
The present invention provides a thin film transistor array panel comprising: an insulating substrate; a gate line formed on the insulating substrate and having a gate electrode; a gate insulating layer formed on the gate line; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; diffusion barriers formed on the semiconductor and containing nitrogen; a data line crossing the gate line and having a source electrode partially contacting the diffusion barriers; a drain electrode partially contacting the diffusion barriers and facing the source electrode on the gate electrode; and a pixel electrode electrically connected to the drain electrode.
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Cho Beom-Seok
Jeong Chang-Oh
Kim Joo-Han
Lee Je-Hun
Innovation Counsel LLP
Kim Jay C
Parker Kenneth A
Samsung Electronics Co,. Ltd.
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