Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-06-03
2010-06-08
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S151000, C257SE21414
Reexamination Certificate
active
07732265
ABSTRACT:
One embodiment of the present invention is a method for manufacturing a bottom gate type thin film transistor having a gate electrode, a gate insulating film, an oxide semiconductor active layer, a source electrode and a drain electrode on a flexible plastic substrate of a supporting substrate, the method including continuously forming the gate insulating film and the oxide semiconductor active layer on the flexible plastic substrate with the gate electrode inside a vacuum film formation chamber of a film formation apparatus, the apparatus being a type of winding up continuously the roll-shaped substrate, and the gate insulating film and the oxide semiconductor active layer formed without being exposed to air.
REFERENCES:
patent: 2003/0173890 (2003-09-01), Yamazaki et al.
Nomura, Kenji et al., “Room-temperature fabrication of transparent flexible thin-film transistor using amorphous oxide semiconductors”,Nature, Nov. 25, 2004, pp. 488-492.
Choi Calvin
Mulpuri Savitri
Squire Sanders & Dempsey L.L.P.
Toppan Printing Co. Ltd.
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