Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-12
2010-12-07
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S615000, C257S737000, C257S738000
Reexamination Certificate
active
07846830
ABSTRACT:
The objects of the present invention is to improve the impact resistance of the semiconductor device against the impact from the top surface direction, to improve the corrosion resistance of the surface of the top layer interconnect, to inhibit the crack occurred in the upper layer of the interconnect layer when the surface of the electrode pad is poked with the probe during the non-defective/defective screening, and to prevent the corrosion of the interconnect layer when the surface of electrode pad is poked with the probe during the non-defective/defective screening. A Ti film116, a TiN film115and a pad metal film117are formed in this sequence on the upper surface of a Cu interconnect112. The thermal annealing process is conducted within an inert gas atmosphere to form a Ti—Cu layer113, and thereafter a polyimide film118is formed, and then a cover through hole is provided thereon to expose the surface of the pad metal film117, and finally a solder ball120is joined thereto.
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Kunimune Yorinobu
Oda Noriaki
Takewaki Toshiyuki
Karimy Mohammad T
Muirhead and Saturnelli LLC
NEC Electronics Corporation
Smith Bradley K
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