Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-29
2010-10-26
Menz, Laura M (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S019000, C257S401000
Reexamination Certificate
active
07821061
ABSTRACT:
A method to provide a transistor or memory cell structure. The method comprises: providing a substrate including a lower Si substrate and an insulating layer on the substrate; providing a first projection extending above the insulating layer, the first projection including an Si material and a Si1-xGex material; and exposing the first projection to preferential oxidation to yield a second projection including a center region comprising Ge/Si1-yGey and a covering region comprising SiO2 and enclosing the center region.
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Chau Robert S.
Doyle Brian S.
Jin Been-Yih
Kavalieros Jack T.
Intel Corporation
Lane Scott M.
Menz Laura M
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