Mask for sequential lateral solidification and method of...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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07829245

ABSTRACT:
A mask for sequential lateral solidification capable of preventing pattern deformation that may be caused by laser beam, and a method of manufacturing the same are provided. The mask includes a transparent substrate, and a heat-resistant oxide film pattern, disposed on the transparent substrate, blocking a laser beam.

REFERENCES:
patent: 5970368 (1999-10-01), Sasaki et al.
patent: 6322625 (2001-11-01), Im
patent: 7371484 (2008-05-01), Lee et al.
patent: 2004/0087116 (2004-05-01), Nakayama
patent: 2006/0024592 (2006-02-01), Kim
patent: 2006/0121369 (2006-06-01), Hwang
patent: 2004-311935 (2004-11-01), None
patent: 10-0484399 (2005-04-01), None
patent: 10-0486676 (2005-04-01), None
Patent Abstracts of Japan, Publication No. 2004-311935, Nov. 4, 2004, 1 p.
Korean Patent Abstracts, Registration No. 10-0484399, Apr. 12, 2005, 1 p.
Korean Patent Abstracts, Registration No. 10-0486676, Apr. 22, 2005, 1 p.

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