Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2005-10-05
2010-11-02
Davis, Daborah Chacko (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S311000, C430S314000, C430S330000
Reexamination Certificate
active
07824842
ABSTRACT:
A single exposure method and a double exposure method for reducing mask error factor and for enhancing lithographic printing-process resolution is presented. The invention comprises decomposing a desired pattern of dense lines and spaces in two sub patterns of semi dense spaces that are printed in interlaced position with respect to each other, using positive tone resist. Each of the exposures is executed after applying a relative space-width widening to the spaces of two corresponding mask patterns of semi dense spaces. A factor representative for the space-width widening has a value between 1 and 3, thereby reducing mask error factor and line edge roughness.
REFERENCES:
patent: 5546225 (1996-08-01), Shiraishi
patent: 6042998 (2000-03-01), Brueck et al.
patent: 6569605 (2003-05-01), Bae
patent: 6573975 (2003-06-01), Govil et al.
patent: 2002/0150841 (2002-10-01), Wang et al.
patent: 2003/0076423 (2003-04-01), Dolgoff
patent: 2005/0069814 (2005-03-01), Endo et al.
patent: 2005/0255696 (2005-11-01), Makiyama et al.
patent: 06-123962 (1994-05-01), None
patent: 06-138643 (1994-05-01), None
patent: 2005-107226 (2005-04-01), None
patent: 2005-148597 (2005-06-01), None
patent: 2004/100235 (2004-11-01), None
Neisser et al., Simulation and Experimental Evaluation of Double Exposure Techniques, IBM Microelectronics, 372/SPIE vol. 3334, pp. 372-373, Feb. 1998.
Yen et al., Low-K, Optical Lithography for 100 nm Logic Technology and Beyond, J. Vac. Sci. Technol. B 19(6), Nov./Dec. 2001, pp. 2329-2334.
European Search Report issued for European Patent Application No. 06255143.7-2222, dated Feb. 19, 2007.
Maenhoudt, et al., “Double Patterning Scheme for sub-0.25 k1 Single Damascene Structures at NA=0.75, λ=193nm,” Optical Microlithography XVIII, Proceedings of SPIE vol. 5754, 2005, pp. 1508-1518, May 2005.
Ebihara, et al., “Beyond K1=0.25 Lithography: 70nm L/S Patterning Using KrF Scanners,” Proceedings of SPIE vol. 5256, 2003, pp. 985-994, Dec. 17, 2003.
Fu et al., “Maximization of Process Windows for Low-k1 Spaces Using KrF Lithography,” Proceedings of SPIE, vol. 5040, 2003, pp. 955-966, Feb. 2003.
Yan, et al., “Sub-Micron Low-k1Imaging Characteristics Using a DUV Printing Tool and Binary Masks,” Proceedings of SPIE, vol. 2440, pp. 270-277, May 1995.
English translation of Office Action dated Aug. 18, 2010 of Japanese patent application No. 2006-266438.
ASML Netherlands B.V.
Chacko Davis Daborah
Pillsbury Winthrop Shaw & Pittman LLP
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