Plasma processing apparatus and plasma processing method

Details Plasma processing apparatus and plasma processing method Plasma processing apparatus and plasma processing method

2007-03-07

2010-10-05

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S712000, C156S345520

Reexamination Certificate

active

07807581

ABSTRACT:
The present invention provides a plasma processing apparatus or a plasma processing method that can etch a multilayer film structure for constituting a gate structure with high accuracy and high efficiency. A plasma processing method of, on processing a sample on a sample stage112in a depressurized discharge room117, etching a multilayer film (including a high-k and a metal gate) at 0.1 Pa or less and with the sample stage112temperature-regulated by using a pressure gauge133to be used for pressure regulation and connected to the processing room and a main pump for exhaustion130.

REFERENCES:
patent: 5737117 (1998-04-01), Imaeda et al.
patent: 6103631 (2000-08-01), Soda et al.
patent: 7037849 (2006-05-01), Chiu et al.
patent: 2005/0034674 (2005-02-01), Ono
patent: 2005-045126 (2005-02-01), None

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