Semiconductor device manufacturing: process – Making passive device – Resistor
Reexamination Certificate
2007-07-19
2010-12-21
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making passive device
Resistor
C438S171000, C438S238000, C438S381000, C257SE21495
Reexamination Certificate
active
07855120
ABSTRACT:
Methods of forming an integrated circuit device may include forming an insulating layer on an integrated circuit substrate, forming a first conductive layer on the insulating layer, and forming a second conductive layer on the first conductive layer so that the first conductive layer is between the second conductive layer and the insulating layer. Moreover, the first conductive layer may be a layer of a first material, the second conductive layer may be a layer of a second material, and the first and second materials may be different. A hole may be formed in the second conductive layer so that portions of the first conductive layer are exposed through the hole. After forming the hole in the second conductive layer, the first and second conductive layers may be patterned so that portions of the first and second conductive layers surrounding portions of the first conductive layer exposed through the hole are removed while maintaining portions of the first conductive layer previously exposed through the hole.
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Korean Office Action (5 pages) corresponding to Korean Patent Application No. 10-2003-0075750; Mailing Date: Sep. 30, 2005.
Hwang Yoo-Sang
Park Je-Min
Myers Bigel Sibley & Sajovec P.A.
Nguyen Duy T
Pham Thanh V
Samsung Electronics Co,. Ltd.
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