Memory cell and method of programming the same

Details Memory cell and method of programming the same Memory cell and method of programming the same

2008-08-18

2010-06-15

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030

Reexamination Certificate

active

07738300

ABSTRACT:
A method of programming a memory cell is described. The memory cell includes a gate with a charge trapping layer isolated from a substrate for storing data with a first region and a second region separated from the first region. The method of programming the memory cell includes applying a first voltage arrangement with a first gate voltage for programming the first region and applying a second voltage arrangement with a second gate voltage for programming the second region. The first gate voltage is greater than the second gate voltage.

REFERENCES:
patent: 6215702 (2001-04-01), Derhacobian et al.
patent: 6608778 (2003-08-01), Liu et al.

Affiliated with

Also associated with

Rating

Memory cell and method of programming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell and method of programming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell and method of programming the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4225981