Method of manufacturing semiconductor device without plasma dama

Details Method of manufacturing semiconductor device without plasma dama Method of manufacturing semiconductor device without plasma dama

1997-05-05

1999-03-02

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438629, 438636, 438656, H01L 21283

Patent

active

058770828

ABSTRACT:
In a method of manufacturing a semiconductor device, a conductive film is formed for a plurality of wiring patterns on a first insulating film and a second insulating film is formed on the conductive film. The second insulating film is patterned to be adaptive for the plurality of wiring patterns and then anisotropically etching is performed to the conductive film using the patterned second insulating film a mask such that a part of the conductive film is remained in a thickness direction of the conductive film. Subsequently, side wall insulating films are formed on side walls of the etched conductive film and then the conductive film is completely patterned for the plurality of wiring patterns using the side wall insulating films and the patterned second insulating film as a mask. In this case, the step of anisotropically etching the conductive film includes stopping the etching when the etching is performed by a predetermined depth with respect to a film thickness of the conductive film. Alternatively, when a lower layer of the conductive film is detected, the etching may be stopped.

REFERENCES:
patent: 4885259 (1989-12-01), Osinski et al.
patent: 5472895 (1995-12-01), Park
patent: 5512514 (1996-04-01), Lee
patent: 5656543 (1997-08-01), Chung

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