Process for forming doped regions from solid phase diffusion sou

Details Process for forming doped regions from solid phase diffusion sou Process for forming doped regions from solid phase diffusion sou

1997-03-31

1999-03-02

Niebling, John F.

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438783, 438301, H01L 21385

Patent

active

058770720

ABSTRACT:
A process for doping a region in a substrate from a solid phase source. An inert gas is bubbled through a dopant containing ester and supplied to a chamber along with the gases used to form a silicon dioxide layer such as a TEOS formed layer. The flow of the inert gas can be modulated to grade the dopant concentration in the silicon dioxide layer. The dopant is diffused from the silicon dioxide layer into the substrate to form, for instance, source and drain regions in field-effect transistors.

REFERENCES:
patent: 4782036 (1988-11-01), Becker et al.
patent: 5354715 (1994-10-01), Wang et al.
patent: 5518945 (1996-05-01), Bracchitta et al.
patent: 5531183 (1996-07-01), Krishnam
patent: 5716890 (1998-02-01), Yao
Olin Electronic Materials Diffusion Systems, Product Data Sheet No. EBB010694.
"A New Half-Micron p-Channel Mosfet with Latips" (LARGE-TILT-ANGLE IMPLANTED PUNCH THROUGH STOPPER), Hori & Kurimoto, IEDM 88.beginning at p. 394.

Affiliated with

Also associated with

Rating

Process for forming doped regions from solid phase diffusion sou does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming doped regions from solid phase diffusion sou, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming doped regions from solid phase diffusion sou will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-422457