Masking methods during semiconductor device fabrication

Details Masking methods during semiconductor device fabrication Masking methods during semiconductor device fabrication

1996-09-12

1999-03-02

Dang, Trung

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth step with preceding and subsequent diverse...

438483, 438504, 438735, 438767, H01L 2120

Patent

active

058770712

ABSTRACT:
A method of removing an oxide mask during fabrication of semiconductor devices which includes providing a providing a III-V compound semiconductor substrate having a surface, the surface having a growth area and a masked area masked by an oxide film formed on the surface thereof. The oxide film is removed with a Trisdimethylamino group V compound.

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patent: 5701019 (1997-12-01), Matsumoto et al.
Y. Nomura et al., Jpn. J. Appl. Phys. 33(12B)(1994)L1744 "Low temperature surface cleaning of GaAs using TDMAAs" , Dec. 1994.
D. Marx et al., J Cryst Growth 150(1995)551 "Low temperature etching of GaAs . . . using TDMAAs", May 1995.
T.J. Whitaker et al., J. Cryst Growth 164(1996)125 "AFM studies of substrate cleaning using TDMAAs and TDMASb . . . ", Jul. 1996.
C.W. Tu et al., J. Cryst Growth 163 (1996)187 "Growth, etching, doping . . . in CBE of GaAs . . . ", May 1996.

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