Power semiconductor device

Details Power semiconductor device Power semiconductor device

2008-12-19

2010-06-01

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S343000, C257S346000

Reexamination Certificate

active

07728388

ABSTRACT:
A power semiconductor device includes a P type silicon substrate; a deep N well in the P type silicon substrate; a P grade region in the deep N well; a P+drain region in the P grade region; a first STI region in the P grade region; a second STI region in the P grade region, wherein the first and second STI region isolate the P+drain region; a third STI region in the deep N well; a gate electrode overlying an area between the second and third STI regions and covering a portion of the second STI region; a gate dielectric layer between the gate electrode and the P type silicon substrate; a P well formed at one side of the third STI region; and a P+source region in the P well.

REFERENCES:
patent: 6172401 (2001-01-01), Brand

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