Lateral MOSFET and manufacturing method thereof

Details Lateral MOSFET and manufacturing method thereof Lateral MOSFET and manufacturing method thereof

2008-02-25

2010-10-05

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257SE29262, C257SE21410, C438S270000

Reexamination Certificate

active

07808021

ABSTRACT:
A lateral MOSFET according to the present invention has a trench gate structure having a cross sectional shape spreading toward an open end. The cross sectional shape is T-shape. The T-shaped cross section has a dimensional ratio of a width of a lower trench having a narrow width to a width of an upper trench having a wide width of 1:3, and a dimensional ratio of a depth of the lower trench to a depth of the upper trench of 1:1, the lower trench width having a same central axis as the upper trench width.

REFERENCES:
patent: 2004/0256666 (2004-12-01), Fujishima et al.
patent: 2005/0073028 (2005-04-01), Grant et al.
patent: 11-103058 (1999-04-01), None
patent: 2006-19518 (2006-01-01), None

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