Bulk FinFET device

Details Bulk FinFET device Bulk FinFET device

2008-02-11

2010-02-23

Coleman, W. David (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29255

Reexamination Certificate

active

07667248

ABSTRACT:
A finFET structure and a method of fabricating the finFET structure. The method includes: forming a silicon fin on a top surface of a silicon substrate; forming a gate dielectric on opposite sidewalls of the fin; forming a gate electrode over a channel region of the fin, the gate electrode in direct physical contact with the gate dielectric layer on the opposite sidewalls of the fin; forming a first source/drain in the fin on a first side of the channel region and forming a second source/drain in the fin on a second side of the channel region; removing a portion of the substrate from under at least a portion of the first and second source/drains to create a void; and filling the void with a dielectric material. The structure includes a body contact between the silicon body of the finFET and the substrate.

REFERENCES:
patent: 6960804 (2005-11-01), Yang et al.
patent: 7095065 (2006-08-01), Yu et al.
patent: 7101763 (2006-09-01), Anderson et al.
patent: 7145220 (2006-12-01), Morikado
patent: 7247896 (2007-07-01), Oh et al.
patent: 7279375 (2007-10-01), Radosavljevic et al.
patent: 7335545 (2008-02-01), Currie
patent: 2007/0267668 (2007-11-01), Fischer
Quirk and Serda, Semiconductor Manufacturing Technology, Prentice Hall, Upper Saddle River, New Jersey, © 2001, pp. 289.

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