Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reissue Patent
2005-12-08
2010-06-01
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S088000, C257SE29137, C257S057000, C257S072000, C257S347000, C349S038000
Reissue Patent
active
RE041363
ABSTRACT:
A TFT substrate includes a gate electrode and gate pad on a transparent substrate, an insulating layer on the gate electrode and exposing a portion of the gate pad, a semiconductor film on the insulating layer and the gate electrode, an impurity doped semiconductor film on the semiconductor film, the impurity doped semiconductor film contacting a top surface of the semiconductor film over the gate electrode, source and drain electrodes and a data line on a portion of the impurity doped semiconductor film, a protection film on the source and drain electrodes and the insulating layer in a gate pad area, the protection film having a contact hole over the drain electrode exposing a top surface of the gate pad, a first pixel electrode electrically connected to the drain electrode on the protection film, and a second pixel electrode directly connected to the exposed top surface of the gate pad.
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Lee Jueng-gil
Lee Jung-ho
Nam Hyo-rak
Dickey Thomas L
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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