Nonvolatile memory device and method of operating and...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185330, C365S185110, C365S185220

Reexamination Certificate

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07813185

ABSTRACT:
Provided is a method of reliably operating a highly integratable nonvolatile memory device. The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line. In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.

REFERENCES:
patent: 6894924 (2005-05-01), Choi et al.
patent: 6903981 (2005-06-01), Futatsuyama et al.
patent: 6967874 (2005-11-01), Hosono
patent: 6975543 (2005-12-01), Kurihara
patent: 7035147 (2006-04-01), Yeh et al.
patent: 2006/0249779 (2006-11-01), Choi et al.

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