Silicon wafer and method for manufacturing the same

Details Silicon wafer and method for manufacturing the same Silicon wafer and method for manufacturing the same

2005-07-20

2010-11-02

Rao, G. Nagesh (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S003000, C117S043000, C117S089000, C117S101000, C117S106000

Reexamination Certificate

active

07824493

ABSTRACT:
A method for manufacturing a silicon wafer includes a step of annealing a silicon wafer which is sliced from a silicon single crystal ingot, thereby forming a DZ layer in a first surface and in a second surface of the silicon wafer and a step of removing either a portion of the DZ layer in the first surface or a portion of the DZ layer in the second surface.

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Japanese Office Action dated Apr. 26, 2010 for Appl. No. 2004-214983.

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