Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2009-01-16

2010-12-21

Le, Thao (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE23145, C438S637000

Reexamination Certificate

active

07855138

ABSTRACT:
A trench is formed by a process which removes a damage layer formed on a sidewall of a low dielectric constant layer, a process which forms a second protection insulating layer by a chemical vapor deposition (CVD) technique and forms a second concave portion by covering a sidewall of the low dielectric constant layer with the second protection insulating layer, and a process which shapes the second protection insulating layer by etch back so that a trench has a sidewall that the second protection insulating layer is selectively formed on a surface of the low dielectric constant layer.

REFERENCES:
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patent: 2008/0061282 (2008-03-01), Sato et al.
patent: 2008/0258216 (2008-10-01), Kikuchi
patent: 2008/0296677 (2008-12-01), Takaishi
patent: 2009/0114949 (2009-05-01), Hebert
patent: 2009/0197404 (2009-08-01), Yang
patent: 2009/0200604 (2009-08-01), Chidambarrao et al.
patent: 2009/0242973 (2009-10-01), Hebert et al.
patent: 2004-072080 (2004-03-01), None
patent: 2007-005679 (2007-01-01), None
patent: WO 2004/107434 (2004-12-01), None

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