Semiconductor device having a through electrode,...

Details Semiconductor device having a through electrode,... Semiconductor device having a through electrode,...

2008-09-15

2010-10-12

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21012, C257S693000

Reexamination Certificate

active

07811920

ABSTRACT:
The layout density of the through electrodes in the horizontal plane of the substrate is enhanced. Through holes103extending through the silicon substrate101is provided. An insulating film105is buried within the through hole103. A plurality of columnar through plugs107are provided in the insulating film105.

REFERENCES:
patent: 5276343 (1994-01-01), Kumagai et al.
patent: 5899734 (1999-05-01), Lee
patent: 6365452 (2002-04-01), Perng et al.
patent: 6420751 (2002-07-01), Maeda et al.
patent: 6544833 (2003-04-01), Kawakubo
patent: 6987043 (2006-01-01), Kujirai et al.
patent: 7115972 (2006-10-01), Dotta et al.
patent: 7291911 (2007-11-01), Usami
patent: 7323785 (2008-01-01), Uchiyama
patent: 7488674 (2009-02-01), Usami
patent: 2002/0190375 (2002-12-01), Mashino et al.
patent: 2004/0212086 (2004-10-01), Dotta et al.
patent: 2004/0248362 (2004-12-01), Nakamura et al.
patent: 2004/0262767 (2004-12-01), Matsuo
patent: 2005/0136568 (2005-06-01), Fukazawa
patent: 2006/0001174 (2006-01-01), Matsui
patent: 2006/0006539 (2006-01-01), Matsui et al.
patent: 2006/0128155 (2006-06-01), Miyata et al.
patent: 2006/0220230 (2006-10-01), Tanaka et al.
patent: 2007/0134819 (2007-06-01), Uchiyama
patent: 2008/0067665 (2008-03-01), Aziz et al.
patent: 1191596 (2002-03-01), None
patent: 4-302470 (1992-10-01), None
patent: 2002-043502 (2002-02-01), None
patent: 2002-83945 (2002-03-01), None
patent: 2002-289623 (2002-10-01), None
patent: 2003-007909 (2003-01-01), None

Affiliated with

Also associated with

Rating

Semiconductor device having a through electrode,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a through electrode,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a through electrode,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4218192