Plasma oxidation method and method for manufacturing...

Details Plasma oxidation method and method for manufacturing... Plasma oxidation method and method for manufacturing...

2007-02-27

2010-11-02

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S771000, C438S592000, C438S788000, C118S715000

Reexamination Certificate

active

07825018

ABSTRACT:
A plasma oxidation processing method is performed, on a structural object including a silicon layer and a refractory metal-containing layer, to form a silicon oxide film. A first plasma oxidation process is performed by use of a process gas including at least hydrogen gas and oxygen gas and a process pressure of 1.33 to 66.67 Pa. A second plasma oxidation process is performed by use of a process gas including at least hydrogen gas and oxygen gas and a process pressure of 133.3 to 1,333 Pa, after the first plasma oxidation process.

REFERENCES:
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patent: 2008/0093658 (2008-04-01), Shiozawa et al.
patent: 2001 015753 (2001-01-01), None
patent: 2006 049779 (2006-02-01), None
patent: 2004 073073 (2004-08-01), None
patent: 2006 016642 (2006-02-01), None
patent: WO 2006016642 (2006-02-01), None
patent: WO 2006070685 (2006-07-01), None

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