Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2008-10-27
2010-06-15
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C438S018000, C324S1540PB, C257SE23179, C257SE21521
Reexamination Certificate
active
07737440
ABSTRACT:
A test structure and a method for fabricating the same are disclosed. The test structure includes a plurality of sampling lines over a substrate located between a plurality of a first grounding lines and a plurality of a second grounding lines. The sampling lines are selectively electrically coupled to the first grounding line or the second grounding line and include at least one programmed defect. A double-patterning fabricating approach is utilized to produce such test structure which may be applied to a charged particle beam such as an electron-beam defect inspection system.
REFERENCES:
patent: 2008/0246030 (2008-10-01), Satya et al.
Hermes Microvision Inc.
Mandala Victor A
Moore Whitney
Rosenberg , Klein & Lee
LandOfFree
Test structure for charged particle beam inspection and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Test structure for charged particle beam inspection and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Test structure for charged particle beam inspection and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4215964