Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-07-14
2010-10-26
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S072000, C257SE29136, C257SE29151, C257SE31125
Reexamination Certificate
active
07821006
ABSTRACT:
There are provided a TFT, a TFT substrate using the TFT, a method of fabricating the TFT substrate, and an LCD. The TFT includes a source region, a drain region, and a gate electrode having an opening. The opening of the gate electrode is to enhance the light sensing ability of the TFT when it is used as a light sensor, since light is incident into a region where the opening is formed. The TFT including the gate having the opening can be used in a substrate of a flat display or an LCD using such a substrate. The above TFT can sense light incident from outside the display to adjust the brightness of the screen according to the external illumination.
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English Language Abstract, Korean Patent Publication No. 2002-0025979, 1 p.
English Language Abstract, Korean Patent Publication No. 10-2005-0036246, Apr. 20, 2005, 1 p.
Choi Pil-Mo
Jung Kwan-Wook
Kim Ung-Sik
Lee Sang-Hoon
Maeng Ho-Suk
Arena Andrew O
Gurley Lynne A
Innovation Counsel LLP
Samsung Electronics Co,. Ltd.
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