Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-11-17
2010-11-30
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27104
Reexamination Certificate
active
07842989
ABSTRACT:
A memory element including a first FET, and a selection switch including a second FET are connected in series, and a semiconductor film and a dielectric film stacked over a substrate form a common channel and a common gate insulating film in the first and second FETs. A first gate electrode of the first FET and a second gate electrode of the second FET are formed on the dielectric film, and a drain electrode and a source electrode are formed on the semiconductor film. Under the semiconductor film, a back-gate electrode is formed with a ferroelectric film interposed therebetween, and the ends of the semiconductor film that forms the channel are located inwardly of the ends of the back-gate electrode.
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McDermott Will & Emery LLP
Panasonic Corporation
Sengdara Vongsavanh
Tran Minh-Loan T
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