Capacitor unit and method of forming the same

Details Capacitor unit and method of forming the same Capacitor unit and method of forming the same

2008-04-21

2010-12-21

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C438S957000

Reexamination Certificate

active

07855431

ABSTRACT:
A capacitor unit includes a first capacitor and a second capacitor. The first capacitor includes a first lower electrode, a first dielectric layer pattern and a first upper electrode sequentially stacked. The first capacitor includes a first control layer pattern for controlling a voltage coefficient of capacitance (VCC) of the first capacitor between the first lower electrode and the first dielectric layer pattern. The second capacitor includes a second lower electrode, a second dielectric layer pattern and a second upper electrode sequentially stacked. The second lower electrode is electrically connected to the first upper electrode, and the second upper electrode is electrically connected to the second lower electrode. The second capacitor includes a second control layer pattern for controlling a VCC of the second capacitor between the second lower electrode and the second dielectric layer pattern.

REFERENCES:
patent: 4731696 (1988-03-01), Himes et al.
patent: 5208597 (1993-05-01), Early et al.
patent: 6069050 (2000-05-01), Hou et al.
patent: 10-0480603 (2005-03-01), None
patent: 1020060072752 (2006-06-01), None
patent: 10-0642752 (2006-10-01), None
patent: 1020060110551 (2006-10-01), None
English Abstract for Publication No. 10-0480603.
English Abstract for Publication No. 1020060072752.
English Abstract for Publication No. 1020060110551.
English Abstract for Publication No. 10-0642752.

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