Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-02-21
2010-02-23
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S001000, C257S002000, C438S900000, C365S148000
Reexamination Certificate
active
07667221
ABSTRACT:
In a phase change memory, an interlayer insulating layer is disposed on a substrate. A heater plug includes a lower portion disposed in a contact hole penetrating the interlayer insulating layer and an upper portion protruding upward over the top surface of the interlayer insulating layer. A phase change pattern is disposed on the interlayer insulating layer to cover the top surface and the side surface of the protruding portion of the heater plug. An insulating spacer is interposed between the phase change pattern and the side surface of the protruding portion of the heater plug. A capping electrode is disposed on the phase change pattern.
REFERENCES:
patent: 7411818 (2008-08-01), Elmegreen et al.
patent: 2004/0256694 (2004-12-01), Kostylev et al.
patent: 2008/0277642 (2008-11-01), Zandt et al.
patent: 2003-332529 (2003-11-01), None
patent: 10-2003-0081900 (2003-10-01), None
patent: 10-2004-0017694 (2004-02-01), None
patent: 1020040093763 (2004-11-01), None
patent: 1020050053255 (2005-06-01), None
patent: 10-2006-0001091 (2006-01-01), None
patent: WO 2006/079952 (2006-08-01), None
Hwang Jae-Seung
Ko Yong-Sun
Seo Jun
Song Jong-Heui
Harness & Dickey & Pierce P.L.C.
Pert Evan
Samsung Electronics Co,. Ltd.
Wilson Scott R
LandOfFree
Phase change memory devices and methods for fabricating the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Phase change memory devices and methods for fabricating the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change memory devices and methods for fabricating the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4213511