Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-15
2010-11-30
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S004000, C257S330000, C257SE21090, C257SE29262, C257SE47001, C438S270000, C438S396000
Reexamination Certificate
active
07842999
ABSTRACT:
A semiconductor device is provided with silicon pillars arranged in a matrix and formed substantially perpendicularly to a main surface of a substrate, bit lines provided above the silicon pillars, gate electrodes covering a side surface of each silicon pillars via gate insulation films, first and second diffusion layers provided at an upper part and a lower part of the silicon pillar, respectively, a reference potential wiring provided in common to the plural silicon pillars for supplying a reference potential to the first diffusion layers, and memory elements connected between the second diffusion layers and the bit lines. The gate electrodes covering the silicon pillars adjacent in a first direction crossing the bit line are in contact with each other, and gate electrodes covering the silicon pillars adjacent in a second direction parallel with the bit line are isolated from each other.
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Elpida Memory Inc.
Mandala Victor A
Moore Whitney
Sughrue & Mion, PLLC
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