Fishing – trapping – and vermin destroying
Patent
1989-12-11
1991-04-16
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437190, 437195, 437189, 357 71, H01L 2190, H01L 2144
Patent
active
050082167
ABSTRACT:
A method for forming contact studs to connect the substrate component devices to the overlying wiring patterns is disclosed herein. The contact studs are formed by a combination of blanket depositing an adhesive and reactive layer into the contact opening. Onto said adhesive and reactive layer is deposited a seed layer and said contact stud is completed by filling the contact opening with a third metal layer. Preferably, the adhesive and reactive layer is a transistion metal and the seed and filler layers are refractory metals.
REFERENCES:
patent: 4600624 (1986-07-01), Joseph et al.
patent: 4720908 (1988-01-01), Wills
patent: 4751197 (1988-06-01), Wills
patent: 4789648 (1988-12-01), Chow et al.
patent: 4795722 (1989-01-01), Welch et al.
patent: 4800176 (1989-01-01), Kakumu et al.
patent: 4822753 (1989-04-01), Pintchovski
patent: 4884123 (1989-11-01), Dixit et al.
"Contact Resistance Improvement for Tungsten Metallurgy", IBM Tech. Disc. Bulletin, vol. 32, No. 8B, Jan. 1990, p. 50.
Y. Pauleau, "Interconnect Materials for VLSI Circuits," Solid State Technology, vol. 30, No. 4, pp. 155-162 (Apr. 1987).
Huang Hung-Chang W.
Totta Paul A.
Ahsan Aziz M.
Hearn Brian E.
Holtzman Laura M.
International Business Machines - Corporation
LandOfFree
Process for improved contact stud structure for semiconductor de does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for improved contact stud structure for semiconductor de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for improved contact stud structure for semiconductor de will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-421121