Non-volatile memory device and erasing method thereof

Details Non-volatile memory device and erasing method thereof Non-volatile memory device and erasing method thereof

2007-11-26

2010-02-23

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185140, C365S185170, C365S185030, C365S185110

Reexamination Certificate

active

07668019

ABSTRACT:
In one aspect, a non-volatile NAND-flash semiconductor memory device is provided which is configured to execute at least one of a pre-program operation and a post-program operation before and after an erase operation, respectively. Each of the pre-program and post-program operations includes applying a program voltage to a subset of a plurality of word lines defining a word line block of the memory device.

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