Phase change memory cell with constriction structure

Details Phase change memory cell with constriction structure Phase change memory cell with constriction structure

2008-03-14

2010-12-14

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000

Reexamination Certificate

active

07852658

ABSTRACT:
Some embodiments include apparatus and methods having a memory cell with a first electrode and a second electrode, and a memory element directly contacting the first and second electrodes. The memory element may include a programmable portion having a material configured to change between multiple phases. The programmable portion may be isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element.

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