Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-11
2010-06-15
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000
Reexamination Certificate
active
07737510
ABSTRACT:
A gate insulating film and a gate electrode are formed on an active region of a semiconductor substrate. A sidewall forming an L shape in cross section is formed on the sides of the gate electrode. Source/drain regions are formed in regions of the semiconductor substrate located outside an area covering the gate electrode and the sidewall. A stress-applying stress liner film is formed to cover the gate electrode and the sidewall.
REFERENCES:
patent: 3999166 (1976-12-01), Goser et al.
patent: 4356623 (1982-11-01), Hunter
patent: 4878100 (1989-10-01), McDavid
patent: 5323053 (1994-06-01), Luryi et al.
patent: 5789787 (1998-08-01), Kadosh et al.
patent: 5846857 (1998-12-01), Ju
patent: 6492665 (2002-12-01), Akamatsu et al.
patent: 7279746 (2007-10-01), Doris et al.
patent: 7321155 (2008-01-01), Ko et al.
patent: 7326622 (2008-02-01), Liu et al.
patent: 2004/0262784 (2004-12-01), Doris et al.
patent: 10-242293 (1998-09-01), None
patent: 2001-516154 (2001-09-01), None
S. Ito et al., “Mechanical Stress Effect of Etch-Stop Nitride and Its Impact on Deep Submicron Transistor Design” IEDM 2000, p. 247.
H.S. Yang, et al., “Dual Stress Liner for High Performance Sub-45NM Gate Length SOI CMOS Manufacturing” IEDM 2004, p. 1075.
Chinese Office Action, with English translation, issued in Chinese Patent Application No. 200610142449.7, mailed May 8, 2009.
McDermott Will & Emery LLP
Panasonic Corporation
Prenty Mark
LandOfFree
Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4202448