Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-27
2010-02-23
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21064
Reexamination Certificate
active
07667273
ABSTRACT:
A semiconductor device includes a p-channel MIS transistor. A p-channel MIS transistor includes; an n-type semiconductor layer formed on the substrate; first source/drain regions being formed in the n-type semiconductor layer and being separated from each other; a first gate insulating film being formed on the n-type semiconductor layer between the first source/drain regions, and containing silicon, oxygen, and nitrogen, or containing silicon and nitrogen; a first gate electrode formed above the first gate insulating film; and a first interfacial layer being formed at an interface between the first gate insulating film and the first gate electrode, and containing a 13-group element. The total number of metallic bonds in the 13-group element in the interfacial layer being larger than the total number of each of oxidized, nitrided, or oxynitrided bonds in the 13-group element in the interfacial layer.
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Koyama Masato
Tsuchiya Yoshinori
Kabushiki Kaisha Toshiba
Movva Amar
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Smith Bradley K
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