Semiconductor memory device having bit-line sense amplifier

Details Semiconductor memory device having bit-line sense amplifier Semiconductor memory device having bit-line sense amplifier

2007-12-28

2010-06-29

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S194000

Reexamination Certificate

active

07746714

ABSTRACT:
A semiconductor memory device including a bit-line sense amplifier is not affected by variation in manufacturing process and has a stable driving scheme. The semiconductor memory device includes: a unit memory cell for storing a data; a sense amplification unit including a bit-line sense amplifier (BLSA) for sensing and amplifying a voltage difference of a bit-line pair receiving the data of the unit memory cell; a variation detection unit for detecting a variation of a manufacturing process to output a detecting signal; and a sense amplifier controlling unit for controlling the BLSA to be activated after a predetermined time from an activation of unit memory cell in response to the detecting signal.

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Notice of Allowance issued from Korean Intellectual Property Office on Feb. 27, 2009 with an English Translation.

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