Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2009-03-17

2010-12-28

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050121

Reexamination Certificate

active

07860139

ABSTRACT:
A semiconductor laser device includes an n-type clad layer, an active layer, and a p-type clad layer having a ridge and wing regions. The wing regions are provided with a first trench present on one side of the ridge and a second trench provided on the other side thereof being interposed therebetween. A reflectivity Rf at a front end face of a resonator, a reflectivity Rr at a rear end face of the resonator, a minimum value W1of a width of the first trench in a region adjacent to the front end face, a minimum value W2of a width of the second trench in the region adjacent to the front end face, a width W3of the first trench at the rear end face, and a width W4of the second trench at the rear end face satisfy Rf<Rr, W1<W3,and W2<W4.A width Wf of the ridge at the front end face, and a width Wr of the ridge at the rear end face satisfy Wf>Wr. The ridge includes a region where a width decreases with distance from the front end side toward the rear end side.

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patent: 2005-064328 (2005-03-01), None

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